| PART |
Description |
Maker |
| 2075SERIES 2075-2000 2075-1000 2075-300 2075-3000 |
Delay 5000 /-100 ns, fixed high B.W. line Tr
Delay 500 /-20 ns, fixed high B.W. line Tr
Delay 4000 /-80 ns, fixed high B.W. line Tr
Delay 3000 /-60 ns, fixed high B.W. line Tr
Delay 300 /-20 ns, fixed high B.W. line Tr
Delay 1000 /-20 ns, fixed high B.W. line Tr
Delay 2000 /-40 ns, fixed high B.W. line Tr
FIXED HIGH B.W. DELAY LINE TR 1ns
|
Data Delay Devices Inc
|
| D2229UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SemeLAB
|
| D2212 D2212UK D2002 D2005 |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(10W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应10W-12.5V-1GHz,单端)
|
SemeLAB
SEME-LAB[Seme LAB]
|
| MAX2058 |
700MHz to 1200MHz High-Linearity, SPI-Controlled DVGA with Integrated Loopback Mixer
|
Maxim Integrated Products, Inc.
|
| TIM7179-6UL |
HIGH POWER P1dB=38.5dBm at 7.1GHz to 7.9GHz
|
Toshiba Semiconductor
|
| D2021UK D2021 |
Gold Metallised Multi-Purpose Silicon DMOS RF FET(7.5W-28V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应7.5W-28V-1GHz,单端)
METAL GATE RF SILICON FET
|
SEME-LAB[Seme LAB]
|
| CFZ25-102-GB CFZ25-102-GT CFZ25-102-JB CFZ25-102-J |
HIGH VOLTAGE CARBON RESISTORS 1/8 WATT to 3 WATT
|
RCD COMPONENTS INC.
|
| D2210UK D1231UK D2010 D2010UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(20W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应20W-12.5V-1GHz,单端)
|
SEME-LAB[Seme LAB]
|
| D2201 D2201UK D2029UK D2030 D2030UK |
METAL GATE RF SILICON FET
Gold Metallised Multi-Purpose Silicon DMOS RF FET(2.5W-12.5V-1GHz,Single Ended)(镀金多用DMOS射频硅场效应2.5W-12.5V-1GHz,单端)
|
SEME-LAB[Seme LAB]
TT electronics Semelab Limited
|
| ICS8432-51 ICS8432BY51L ICS8432BY-51 ICS8432BY-51L |
700MHz, Crystal Oscillator-to-LVPECL Frequency Synthesizer
From old datasheet system
700MHZ, CRYSTAL-TO-3.3V DIFFERENTIAL LVPECL FREQUENCY SYNTHESIZER
|
http://
ICST[Integrated Circuit Systems]
|
| SL24T1G |
300 Watt, SOT-23 Low Capacitance TVS for High Speed Line Protections 300 W, UNIDIRECTIONAL, SILICON, TVS DIODE, TO-236
|
ON Semiconductor
|
